PART |
Description |
Maker |
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
BAT15-03W Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AT41485 AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
INA-50311 INA-50311-BLK INA-50311-TR1 |
1 GHz的硅单片低噪声放大器 1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] http://
|
AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Search -----> AT-41435
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
INA-30311 INA-30311-TR1 |
1 GHz Low Noise Silicon MMIC Amplifier 1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
AA028N1-00 |
240 GHz GaAs MMIC Low Noise Amplifier GT 14C 10#12 4#16 PIN PLUG 24-30 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
|
Q62702-F1772 BF2000W |
From old datasheet system Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BFQ82 |
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
Siemens Semiconductor Group
|
Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|